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this is information on a product in full production. july 2012 doc id 023500 rev 1 1/20 20 std2ln60k3, STF2LN60K3, stu2ln60k3 n-channel 600 v, 4 typ., 2 a supermesh3? power mosfet in dpak, to-220fp and ipak packages datasheet ? production data features 100% avalanche tested extremely high dv/dt capability very low intrinsic capacitance improved diode reverse recovery characteristics zener-protected applications switching applications description these supermesh3? power mosfets are the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max i d p tot std2ln60k3 STF2LN60K3 stu2ln60k3 600 v < 4.5 2 a 45 w 20 w 45 w 3 2 1 dpak to-220fp ipak 1 2 3 ta b 1 3 tab d(2,tab) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging std2ln60k3 2ln60k3 dpak tape and reel STF2LN60K3 to-220fp tu b e stu2ln60k3 ipak www.st.com
contents std2ln60k3, STF2LN60K3, stu2ln60k3 2/20 doc id 023500 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
std2ln60k3, STF2LN60K3, stu2ln60k3 electrical ratings doc id 023500 rev 1 3/20 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak to-220fp ipak v ds drain-source voltage 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 2 2 (1) 1. limited by package 2a i d drain current (continuous) at t c = 100 c 1.26 1.26 (1) 1.26 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 8 8 (1) 8a p tot total dissipation at t c = 25 c 45 20 45 w derating factor 0.36 0.16 0.36 w/c v esd(g-s) gate source esd (hbm-c = 100 pf, r = 1.5 k ) 2500 v dv/dt (3) 3. i sd 2 a, di/dt 400 a/s, peak v ds < v (br)dss peak diode recovery voltage slope 12 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak to-220fp ipak r thj-case thermal resistance junction-case max 2.78 6.25 2.78 c/w r thj-pcb thermal resistance junction-pcb max 50 c/w r thj-amb thermal resistance junction-amb max 62.5 100 c/w table 4. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 2a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 80 mj
electrical characteristics std2ln60k3, STF2LN60K3, stu2ln60k3 4/20 doc id 023500 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on- resistance v gs = 10 v, i d = 1 a 4 4.5 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 235 22 3.5 - pf pf pf c o(tr) (1) 1. c oss eq . time related is defined as a constant equivalent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss eq. capacitance time related v gs = 0, v ds = 0 to 480 v -14-pf c o(er) (2) 2. c oss eq . energy related is defined as a constant equiva lent capacitance giving t he same stored energy as c oss when v d s increases from 0 to 80% v dss eq. capacitance energy related -10-pf r g intrinsic gate resistance f = 1 mhz open drain - 7 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 1 a, v gs = 10 v (see figure 18 ) - 12 1.8 7.7 - nc nc nc
std2ln60k3, STF2LN60K3, stu2ln60k3 electrical characteristics doc id 023500 rev 1 5/20 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 300 v, i d =1 a, r g = 4.7 , v gs = 10 v (see figure 17 ) - 10 8.5 23.5 21 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 2 8 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 2 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2 a, di/dt = 100 a/s v dd = 60 v (see figure 22 ) - 200 800 8 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 22 ) - 230 950 8.5 ns nc a table 9. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso (1) 1. the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absor b possible voltage transients that may occasionally be applied from gate to source. in this respect the z ener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s in tegrity. these integrated zener diodes thus avoid the usage of external components. gate-source breakdown voltage igs= 1 ma (open drain) 30 - v
electrical characteristics std2ln60k3, STF2LN60K3, stu2ln60k3 6/20 doc id 023500 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am1 3 051v1 i d 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am1 3 052v1 i d 1.5 1.0 0.5 0 0 4 v d s (v) 8 (a) 2 6 2.0 5v 6v v g s =10v am1 3 054v1 i d 1.5 1.0 0.5 0 0 4 v g s (v) 8 (a) 2 6 2.0 2.5 v d s =15v am1 3 055v1
std2ln60k3, STF2LN60K3, stu2ln60k3 electrical characteristics doc id 023500 rev 1 7/20 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v g s 6 4 2 0 0 5 q g (nc) (v) 8 10 10 v dd =4 8 0v i d =2a 12 3 00 200 100 0 400 500 v d s v d s (v) am1 3 056v1 r d s (on) 3 .6 3 .4 3 .2 3 .0 0 0.4 i d (a) ( ) 0.2 0.6 3 . 8 4.0 4.2 v g s =10v 1.0 0. 8 1.2 am1 3 057v1 c 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am1 3 05 8 v1 e o ss 0.5 0 0 100 v d s (v) ( j) 400 200 3 00 1 500 600 1.5 am1 3 059v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 i d =50 a am1 3 060v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 2.5 0 i d =1.1a v g s =10v am1 3 061v1
electrical characteristics std2ln60k3, STF2LN60K3, stu2ln60k3 8/20 doc id 023500 rev 1 figure 14. normalized bv dss vs temperature figure 15. source-drain diode forward characteristics figure 16. maximum avalanche energy vs temperature bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 i d =1ma am1 3 062v1 v s d 0 2 i s d (a) (v) 1 5 3 4 0 0.1 0.2 0. 3 0.4 0.6 0.7 t j =-50c t j =150c t j =25c 0.5 0. 8 0.9 am1 3 06 3 v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 10 20 3 0 40 120 140 i d =2 a v dd =50 v 50 60 70 8 0 90 am1 3 064v1
std2ln60k3, STF2LN60K3, stu2ln60k3 test circuits doc id 023500 rev 1 9/20 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data std2ln60k3, STF2LN60K3, stu2ln60k3 10/20 doc id 023500 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
std2ln60k3, STF2LN60K3, stu2ln60k3 package mechanical data doc id 023500 rev 1 11/20 table 10. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data std2ln60k3, STF2LN60K3, stu2ln60k3 12/20 doc id 023500 rev 1 figure 23. dpak (to-252) drawing 006 8 772_i
std2ln60k3, STF2LN60K3, stu2ln60k3 package mechanical data doc id 023500 rev 1 13/20 table 11. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data std2ln60k3, STF2LN60K3, stu2ln60k3 14/20 doc id 023500 rev 1 figure 24. to-220fp drawing 7012510_rev_k_b
std2ln60k3, STF2LN60K3, stu2ln60k3 package mechanical data doc id 023500 rev 1 15/20 table 12. ipak (to-251) mechanical data dim. mm. min. typ max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.3 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e2.28 e1 4.40 4.60 h16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10 o
package mechanical data std2ln60k3, STF2LN60K3, stu2ln60k3 16/20 doc id 023500 rev 1 figure 25. ipak (to-251) drawing 006 8 771_h am09214v1
std2ln60k3, STF2LN60K3, stu2ln60k3 packaging mechanical data doc id 023500 rev 1 17/20 5 packaging mechanical data figure 26. dpak footprint (a) table 13. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a. all dimension are in millimeters 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
packaging mechanical data std2ln60k3, STF2LN60K3, stu2ln60k3 18/20 doc id 023500 rev 1 figure 27. tape for dpak (to-252) figure 28. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
std2ln60k3, STF2LN60K3, stu2ln60k3 revision history doc id 023500 rev 1 19/20 6 revision history table 14. document revision history date revision changes 05-jul-2012 1 first release.
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